gdrWorkshop on substrate preparation for epitaxy

May 22-24, 2018, Villeneuve d'Ascq (IEMN)

Planning

Tuesday, May 22, 2018

Time Event  
14:00 - 17:30 Session: Surface preparation for heterogeneous integration  
14:00 - 15:30 Preparation of silicon substrates for heteroepitaxy - Charles Cornet (INSA Rennes)  
15:30 - 16:00 Coffee break  
16:00 - 17:30 Preparation of SOI substrate for hetero-integration - Christophe Figuet (SOITEC)  

Wednesday, May 23, 2018

Time Event  
09:00 - 12:30 Session: Substrate structuration by etching  
09:00 - 10:30 Si substrate preparation for the growth of SiGe nanostructures - Luc Favre (IM2NP)  
10:30 - 11:00 Coffee break  
11:00 - 12:30 III-V substrate preparation for epitaxial regrowth - Chantal Fontaine (LAAS) & Laurent Cerutti (IES)  
12:30 - 14:00 Lunch  
14:00 - 15:30 Session: Selective epitaxy of nitrides  
14:00 - 15:30 Selective area growth of Nitrides: technology and applications to light emitting structures - Guy Feuillet (CEA-LETI)  
15:30 - 16:00 Coffee break  
16:00 - 18:30 Session: Posters  
20:00 - 23:00 Dinner  

Thursday, May 24, 2018

Time Event  
09:00 - 12:30 Session: VLS and selective area growth of III-V materials  
09:00 - 10:30 Substrate preparation for VLS growth of nanowires - Sébastien Plissard (LAAS)  
10:30 - 11:00 Coffee break  
11:00 - 12:30 Substrate preparation for selective area growth of III-V nanostructures - Ludovic Desplanque (IEMN)  
12:30 - 14:00 Lunch  
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