Workshop on substrate preparation for epitaxy
May 22-24, 2018, Villeneuve d'Ascq (IEMN)
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Poster of the workshop
Invited talks
Planning
Week
Tue. 22
Wed. 23
Thu. 24
List
Tue. 22
Wed. 23
Thu. 24
09:00
10:00
11:00
12:00
13:00
14:00
15:00
16:00
17:00
18:00
19:00
20:00
21:00
22:00
23:00
Session: Surface preparation for heterogeneous integration
Preparation of silicon substrates for heteroepitaxy
Coffee break
Preparation of SOI substrate for hetero-integration
14:00 - 17:30 (3h30)
Session: Surface preparation for heterogeneous integration
14:00 - 15:30 (1h30)
Preparation of silicon substrates for heteroepitaxy
Charles Cornet (INSA Rennes)
15:30 - 16:00 (30min)
Coffee break
16:00 - 17:30 (1h30)
Preparation of SOI substrate for hetero-integration
Christophe Figuet (SOITEC)
Session: Substrate structuration by etching
Si substrate preparation for the growth of SiGe nanostructures
Coffee break
III-V substrate preparation for epitaxial regrowth
9:00 - 12:30 (3h30)
Session: Substrate structuration by etching
9:00 - 10:30 (1h30)
Si substrate preparation for the growth of SiGe nanostructures
Luc Favre (IM2NP)
10:30 - 11:00 (30min)
Coffee break
11:00 - 12:30 (1h30)
III-V substrate preparation for epitaxial regrowth
Chantal Fontaine (LAAS) & Laurent Cerutti (IES)
Lunch
12:30 - 14:00 (1h30)
Lunch
Session: Selective epitaxy of nitrides
Selective area growth of Nitrides: technology and applications to light emitting structures
14:00 - 15:30 (1h30)
Session: Selective epitaxy of nitrides
14:00 - 15:30 (1h30)
Selective area growth of Nitrides: technology and applications to light emitting structures
Guy Feuillet (CEA-LETI)
Coffee break
15:30 - 16:00 (30min)
Coffee break
Session: Posters
16:00 - 18:30 (2h30)
Session: Posters
Dinner
20:00 - 23:00 (3h)
Dinner
Session: VLS and selective area growth of III-V materials
Substrate preparation for VLS growth of nanowires
Coffee break
Substrate preparation for selective area growth of III-V nanostructures
9:00 - 12:30 (3h30)
Session: VLS and selective area growth of III-V materials
9:00 - 10:30 (1h30)
Substrate preparation for VLS growth of nanowires
Sébastien Plissard (LAAS)
10:30 - 11:00 (30min)
Coffee break
11:00 - 12:30 (1h30)
Substrate preparation for selective area growth of III-V nanostructures
Ludovic Desplanque (IEMN)
Lunch
12:30 - 14:00 (1h30)
Lunch
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